Preliminary Program subject to change
08E05 Atomic Layer Deposition
OverviewAtomic Layer Deposition is a film growth technology that is capable of depositing uniform and conformal films with atomic precision. It is rapidly growing field with applications in many fields related to chemical engineering. This session will include talks from both electronic materials processing as well as other areas of application. Topics including kinetic analyses, modeling, surface adsorption studies, process integration, and equipment development issues are strongly encouraged.
Primary SponsorElectronics and Photonics (08e)

Chair

Charles B Musgrave
Assistant Professor
Stanford University
Dept. of Chemical Engineering
Stanford, CA 94305-5025

Phone Number: (650)725-9176
Email: chasm@stanford.edu

CoChair

Bridget R. Rogers
Assistant Professor
Vanderbilt University
VUStation B 351604
Nashville, TN 37235-1604
Phone Number: 615-343-3269
Fax Number: 615-343-7951
Email: bridget.rogers@vanderbilt.edu
Controlled Doping in Ultra-Thin Metal Oxide Films by Radical-Enhanced Ald
Trinh T. Van1, Roman Ostroumov2, Kang Wang2, John Bargar3 and Jane P. Chang1, (1)Chemical Engineering, UCLA, 5532-D Boelter Hall, 420 Westwood Plaza, Los Angeles, CA 90095, (2)Electrcial Engineering, UCLA, 5532-D Boelter Hall, Los Angeles, CA 90095, (3)Stanford Synchrotron Radiation Laboratory, Menlo Park, CA 94025
Atomic Layer Deposition and Film Characterization of Aluminum Oxide Grown on Si Using Tris(Diethylamino)Aluminum Precursor and Water
Ramarajesh R. Katamreddy1, Ronald Inman2, Axel Soulet2, Gregory Jursich2 and Christos G. Takoudis1, (1)Dept of Chemical Engineering, University of Illinois at Chicago, 810 S Clinton St, Chicago, IL 60607, (2)Chicago Research Center, American Air Liquide, 5230 East ave, Countryside, IL 60525
Chemical Mechanisms of Contamination in Atomic Layer Deposition of Hfo¬2
Atashi Mukhopadhyay, Chemical Engineering, Stanford University, 380 Roth Way, Stanford, CA 94305-5025 and Charles B. Musgrave, Stanford University, Dept. of Chemical Engineering, Stanford, CA 94305-5025
Tert-Butylimido-Tris(Diethylamido)Tantalum and Nh3 Precursor Combination for Ald of Tan for Barrier Applications
KeeChan Kim1, Timothy J. Anderson1 and Lisa McElwee-White2, (1)Department of Chemical Engineering, University of Florida, Gainesville, FL 32611, (2)Department of Chemistry, University of Florida, Gainesville, FL 32611
Area Selective Atomic Layer Deposition Using Photodefinable Polymer Masks
Clifford L. Henderson, Dennis W. Hess and Ashwini Sinha, School of Chemical & Biomolecular Engineering, Georgia Institute of Technology, 311 Ferst Drive NW, Atlanta, GA 30332-0100

Materials Engineering and Sciences Division