Preliminary Program subject to change
08E04 Reaction Kinetics in Electronic Materials Processing
OverviewBulk gas phase and liquid phase reactions, reactions in plasmas, and reactions occurring at gas-solid, solid-liquid and solid-solid interfaces are essential to the fabrication of modern electronic devices. This session is focused on topics related to the evaluation and control of reaction kinetics during the processing of electronic materials, including experimental evaluations and modeling and simulation efforts.
Primary SponsorElectronics and Photonics (08e)

Chair

Bridget R. Rogers
Associate Professor
Vanderbilt University
VUStation B 351604
Nashville, TN 37235-1604
Phone Number: 615-343-3269
Fax Number: 615-343-7951
Email: bridget.rogers@vanderbilt.edu

CoChair

Katherine S. Ziemer
Assistant Professor
Northeastern University
Department of Chemical Engineering
451 Snell Engineering Center
Boston, MA 02115

Phone Number: 617-373-2990
Email: k.ziemer@neu.edu
Controlling Ultrashallow Junction Formation through Surface Chemistry
Edmund G. Seebauer, University of Illinois, Department of Chemical Engineering, 600 S. Mathews, Urbana, IL 61802, Kapil Dev, Univ of Illinois, Dept of Chemical Engineering, Urbana, IL 61801, Charlotte T. M. Kwok, University of Illinois, 600 S. Mathews Avenue, Urbana, IL 61801 and Richard D. Braatz, University of Illinois, 600 South Mathews Avenue, Box C-3, 209 Roger Adams Laboratory, MC-712, Urbana, IL 61801
Directed Self Assembly of Si and Ge Nanocrystals on Hfo2 through Kinetically Driven Patterning
Scott K. Stanley1, Sachin V. Joshi2, Sanjay K. Banerjee3 and John G. Ekerdt1, (1)Department of Chemical Engineering, The University of Texas Austin, 1 University Station Stop C0400, Austin, TX 78712, (2)Department of Electrical & Computer Engineering, The University of Texas Austin, PRC-MRC 2nd Floor North, 1 University Station Stop R9950, Austin, TX 78712, (3)Department of Electrical & Computer Engineering, The University of Texas Austin, PRC-Mrc-1st Floor North, 1 University Station Stop R9900, Austin, TX 78712
Grain Focused Simulation of Zirconia Cvd
Max Bloomfield1, Zhe Song2, Bridget R. Rogers2 and Timothy S. Cale1, (1)Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY 12180-3590, (2)Department of Chemical Engineering, Vanderbilt University, VU Station B 351604, Nashville, TN 37325
An Electrochemical Impedance Spectroscopy Study of Chloride and 3-Mercapto-1-Propanesulfonic Acid Interactions in Acidic Copper Electroplating Bath
Hung-Ming Chen, Illinois Institute of Technology, 10 W. 33rd St., Chicago, IL 60616, Satish J. Parulekar, Illinois Institute of Technology, 10 W. 33rd Street, Chicago, IL 60616 and Alan Zdunek, American Air Liquide, 5230 S. East Ave, Countryside, IL 60525
Characterization of Copper Chemical Mechanical Polishing in Nitric Acid Slurries
Moganty Surya Sekhar and S Ramanathan, Department of Chemical Engineering, Indian Institute of Technology Madras, Chennai, 600036, India
Decomposition Kinetics of Diethylzinc by Quantum Chemical Calculations
Young Seok Kim, Yong Sun Won, Helena Hagelin-Weaver and Tim Anderson, Chemical Engineering, University of Florida, 237 CHE PO Box 116005, Gainesville, FL 32611
Decomposition of Aryl- and Alkylimido Precursors for the Cvd of Tungsten Nitride: a Combined Density Functional Theory and Experimental Study
Yong Sun Won1, Young Seok Kim1, Tim Anderson1 and Lisa McElwee-White2, (1)Department of Chemical Engineering, University of Florida, Gainesville, FL 32611, (2)Department of Chemistry, University of Florida, Gainesville, FL 32611

Materials Engineering and Sciences Division