Atomic-Scale Analysis of Ductile Void Growth and Nanocrystalline Domain Formation as Strain Relaxation Mechanisms in Ultra-Thin Metallic Films
M. Rauf Gungor and Dimitrios Maroudas, Department of Chemical Engineering, University of Massachusetts, 686 N. Pleasant Street, Amherst, MA 01003 |
Formation of Epitaxial Ge Nanorings on Si by Self-Assembled Sio2 Particles and Touchdown of Ge through a Thin Layer of Sio2
Qiming Li, University of New Mexico, 1 University of New Mexico, MSC01 1120, Albuquerque, NM 87131-0001 and Sang M. Han, University of New Mexico, Department of Chemical & Nuclear Engineering, 209 Farris Engineering Center, Albuquerque, NM 87131-1341 |
Hydrogen-Induced Crystallization of Silicon at Room Temperature
Radhika C. Mani, Department of Chemical Engineering, University of California at Santa Barbara, Santa Barbara, CA 93106-5080 and Eray S. Aydil, Chemical Engineering and Materials Science Department, University of Minnesota, 151 Amundson Hall, 421 Washington Avenue SE, Minneapolis, MN 55455-0132 |
Nanocharacterization of Relaxation Properties in Organic Thin Film Electronic Materials
Rene M. Overney, Chemcial Engineering, University of Washington, Benson Hall, Seattle, WA 98195 and Tomoko Gray, Chemical Engineering, University of Washington, Benson Hall, Seattle, WA 98195 |
Design Organic Self-Assembly Monolayers (Sams) on Silicon Surface as Low K and High K Dielectric Materials Applied in Nanoelectronics
Weiqiao Deng, California Institute of Technology, Materials and Process Simulation Center (MC 139-74), 1200 E. California Blvd, Pasadena, CA 91125, Qingsong Zhang, Material Science, California Institute of Technology, Materials and Process Simulation Center (MC 139-74), 1200 E. California Blvd, Pasadena, CA 91125 and William A. Goddard, Chemistry, California Institute of Technology, Materials and Process Simulation Center (MC 139-74), 1200 E. California Blvd, Pasadena, CA 91125 |
The Effects of Contact Structures on the Electron Transport Characteristics of Au-Si Interfaces
Liuming Yan, Department of Chemical Engineering, Texas A&M University, 3122 TAMU, College Station, TX 77843 and Jorge M. Seminario, Department of Chemical Engineering and Department of Electrical Engineering, Texas A&M University, College Station, TX 77843 |
Ab Initio Based Current-Voltage Characteristics for Stilbene Substituted Octasilsesquioxanes Attached to Au(111) Electrodes
Neeti Kapur1, Cheng-Ying Lee1 and Matthew Neurock2, (1)Chemical Engineering, University of Virginia, 102 Engineers' Way, Charlottesville, VA 22904, (2)Chemical Engineering and Chemistry, University of Virginia, 102 Engineers' Way, Charlottesville, VA 22904 |
Nanocell: the Possible Solution for Moore's Law
Yuefei Ma1, Liuming Yan2 and Jorge M. Seminario2, (1)Dept. of Chemical Engineering, Texas A&M University, 3122 TAMU, CS, TX 77843, (2)Chemical Engineering, Texas A&M University, 3122 TAMU, CS, TX 77843 |