Wednesday, 2 November 2005 - 9:30 AM
319e
Selective Growth of Si Nanowire Arrays Via Galvanic Displacement Processes in Water-in-Oil Microemulsions
Di Gao1, Rongrui He
2, Carlo Carraro
1, Roger T. Howe
3, Peidong Yang
2, and Roya Maboudian
1. (1) Department of Chemical Engineering, University of California, Berkeley, Berkeley, CA 94720, (2) Department of Chemistry, University of California, Berkeley, Berkeley, CA 94720, (3) Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720
Galvanic displacement processes are employed in water-in-oil microemulsions to deposit gold nanoclusters selectively on Si surfaces and sidewalls. The gold clusters then serve as catalysts to achieve selective growth of vertically and laterally aligned Si nanowire arrays by chemical vapor deposition via the vapor-liquid-solid growth mechanism. The size of the gold clusters is shown to have a good correlation with the microemulsion parameters, which in turn controls the size of the synthesized nanowires.
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