Preliminary Program subject to change
08E04 Reaction Kinetics in Electronic Materials Processing
OverviewBulk gas phase and liquid phase reactions, reactions in plasmas, and reactions occurring at gas-solid, solid-liquid and solid-solid interfaces are essential to the fabrication of modern electronic devices. This session is focused on topics related to the evaluation and control of reaction kinetics during the processing of electronic materials, including experimental evaluations and modeling and simulation efforts.
Primary SponsorElectronics and Photonics (08e)
Co-Sponsor(s)Catalysis and Reaction Engineering Division (20)

Chair

Katherine S. Ziemer
Chemical Engineering
Northeastern University
360 Huntington Avenue
148 Egan Research Center
Boston, MA 02115
Phone Number: 617-373-2990
Fax Number: 617-373-2209
Email: kziemer@coe.neu.edu

CoChair

Charles B. Musgrave
Dept. of Chemical Engineering
Stanford University
Stanford, CA 94305-5025
Phone Number: 650-725-9176
Fax Number: 650-723-9780
Email: chasm@stanford.edu
Decomposition Kinetics of Dimethylcadmium by in-Situ Raman Spectroscopy and Quantum Chemical Calculations
Young Seok Kim and Tim Anderson, Department of Chemical Engineering, University of Florida, Gainesville, FL 32611
Investigation of Cds Thin Film Deposition Kinetics Using a Continuous Flow Microreactor
Chih-hung Chang1, Yu-Jen Chang1, Doo-Hyoung Lee1, S. O. Ryu2 and T. J. Lee2, (1)Oregon State University, Department of Chemical Engineering, Oregon State University, Corvallis, OR 97331, (2)School of Chemical Engineering and Technology,, Yeungnam University, Kyongsan, 712-749, South Korea
Prediction of Reaction Kinetics in Ald of Metal Oxides and Nitrides
Ye Xu, Dept. of Materials Science and Engineering, Stanford University, 380 Roth Way, Stanford, CA 94305-5025, Atashi Mukhopadhyay, Chemical Engineering, Stanford University, 380 Roth Way, Stanford, CA 94305-5025 and Charles B. Musgrave, Stanford University, Dept. of Chemical Engineering, Stanford, CA 94305-5025
Ab Initio Calculations of the Initial Reaction Mechanisms for Tio2 Atomic Layer Deposition Onto Sio2 Surfaces
Zheng Hu and Heath Turner, Chemical and Biological Engineering, University of Alabama, Box 870203, Tuscaloosa, AL 35487-0203
Growth of Epitaxial Γ-Al2O3 Films on 4 H-Silicon Carbide
Carey M. Tanner, Chemical Engineering, UCLA, 420 Westwood Plaza, Los Angeles, CA 90095 and Jane P. Chang, Chemical Engineering, UCLA, 5532-D Boelter Hall, 420 Westwood Plaza, Los Angeles, CA 90095
Controlling Ultrashallow Junction Formation through Surface Chemistry
Ramakrishnan Vaidyanathan1, Charlotte Kwok2 and Edmund G. Seebauer1, (1)University of Illinois, Department of Chemical Engineering, 600 S. Mathews, Urbana, IL 61802, (2)Chemical Engineering, University of Illinois, Department of Chemical Engineering, 600 S. Mathews, Urbana, IL 61802

Materials Engineering and Sciences Division