Process – Structure Relationships of Al2O3 and Hfo2 Composite Films on Silicon
Ramarajesh R. Katamreddy1, Ronald Inman2, Gregory Jursich2, Axel Soulet2 and Christos G. Takoudis3, (1)Dept of Chemical Engineering, University of Illinois at Chicago, 810 S Clinton St, Chicago, IL 60607, (2)Chicago Research Center, American Air Liquide, 5230 East ave, Countryside, IL 60525, (3)Bioengineering and Chemical Engineering, University of Illinois at Chicago, 810 S. Clinton Street, Chicago, IL 60607 |
Quantum Molecular Dynamics Simulations of the Ald of Hfo2
Atashi Mukhopadhyay, Chemical Engineering, Stanford University, 380 Roth Way, Stanford, CA 94305-5025, Javier Fdez. Sanz, Physical Chemistry, Universidad de Sevilla, Sevilla, Spain and Charles B. Musgrave, Stanford University, Dept. of Chemical Engineering, Stanford, CA 94305-5025 |
Spatially Controlled Nano-Scale Doping by Atomic Layer Deposition
John Hoang1, Trinh T. Van1, Monica Sawkar1, John Bargar2 and Jane P. Chang3, (1)Chemical and Biomolecular Engineering Department, UCLA, Los Angeles, CA 90095, (2)Stanford Synchrotron Radiation Laboratory, Menlo Park, CA 94025, (3)Chemical and Biomolecular Engineering Department, UCLA, 5532-D Boelter Hall, 420 Westwood Plaza, Los Angeles, CA 90095 |
Modified Titania Films for Photoelectrochemical Applications
Shenghong Qiu, Depart. of Chemical Engineering, University of Louisville, Louisville, KY 40292 and Thomas L. Starr, Chemical Engineering, University of Louisville, Louisville, KY 40292 |
Kinetics of Ald Ruthenium Nucleation and Growth Studied Using on-Line Auger Electron Spectroscopy
Gregory N. Parsons1, David B. Terry2 and Kie Jin Park2, (1)Chemical and Biomolecular Engineering, North Carolina State University, Raleigh, NC 27695, (2) NC State University, Raleigh, NC 27695 |
Material and Electrical Properties of Hf-Ru-N Gate Electrodes on Hafnium Oxide
Monica Sawkar, UCLA, Los Angeles, CA 90095 and Jane P. Chang, Chemical Engineering, UCLA, 5532-D Boelter Hall, 420 Westwood Plaza, Los Angeles, CA 90095 |
Lithography Via Top Surface Imaging Using Area Selective Atomic Layer Deposition
Ashwini Sinha1, Dennis W. Hess2 and Clifford L. Henderson1, (1)School of Chemical & Biomolecular Engineering, Georgia Institute of Technology, 311 Ferst Drive NW, Atlanta, GA 30332-0100, (2)School of Chemical & Biomolecular Engineering, Georgia Institute of Technology, 311 Ferst Drive, Atlanta, GA 30332-0100 |
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