Impact of Surface Chemistry and Mg:O Flux on Magnesium Oxide Thin Film Heteroepitaxy on Hexagonal Silicon Carbide for Integration of Functional Oxides
Trevor L. Goodrich, Zhuhua Cai and Katherine S. Ziemer, Chemical Engineering, Northeastern University, 360 Huntington Avenue, 148 Egan Research Center, Boston, MA 02115 |
Probing Interactions of Ge with Chemical and Thermal Si02 to Understand Selective Growth of Ge on Si during Molecular Beam Epitaxy
Qiming Li, University of New Mexico, 1 University of New Mexico, MSC01 1120, Albuquerque, NM 87131-0001, Joshua L. Krauss, Materials Science and Engineering, University of Wisconsin Madison, Madison, WI 53706, Stephen Hersee, University of New Mexico, CHTM, 1313 Goddard SE, Room 112B, Albuquerque, NM 87106 and Sang M. Han, University of New Mexico, Department of Chemical & Nuclear Engineering, 209 Farris Engineering Center, Albuquerque, NM 87131-1341 |
Investigations of Silane Adsorption and Reaction on Oxygen-Covered Metal Surfaces
Dylan C. Kershner, Department of Chemical and Biological Engineering, University of Colorado at Boulder, Boulder, CO 80309 and Will Medlin, Chemical and Biological Engineering, University of Colorado at Boulder, Boulder, CO 80309 |
Surface Chemistry for the Growth of Epitaxial Oxide Layers on Si(001)-2x1
A. C. Cuadra1, D. B. Skliar1, W. A. Tisdale III1 and Brian G. Willis2, (1)Chemical Engineering, University of Delaware, Colburn Laboratory, 150 Academy Street, Newark, DE 19716, (2)University of Delaware, Colburn Laboratory, 150 Academy Street, Newark, DE 19716 |
Stm Manipulation and First Principles Simulation of a Molybdenum Disulfide Surface
Hua Ma1, Jian Shu Yang2, Wangzuo Shangguan1, Natarajan Chandrasekhar2 and Mark Saeys1, (1)Chemical and Biomolecular Engineering, National University of Singapore, 4 Engineering Drive 4, Singapore 117576, Singapore, (2)Institute of Materials Research and Engineering, Singapore |
Surface Chemistry of Ferroelectric Lithium Niobate
Yang Yun1, Min Li2, Jun Wang2, Diana Liao2, Lorenz Kampschulte2 and Eric I. Altman2, (1)Chemical Engineering Department, Yale University, 100 Howe St, Apt. 302, New Haven, CT 06511, (2)Chemical Eng, Yale University, New Haven, CT 06511 |
The Role of Dative Bonding in the Reactivity of Semiconductor and Metal Oxide Surfaces
Yuniarto Widjaja, Silicon Storage Technology, 1171 Sonora Ct., Sunnyvale, CA 95086, Collin Mui, Stanford University, 380 Roth Way, Stanford, CA 94305-5025, Atashi Mukhopadhyay, Chemical Engineering, Stanford University, 380 Roth Way, Stanford, CA 94305-5025 and Charles B. Musgrave, Stanford University, Dept. of Chemical Engineering, Stanford, CA 94305-5025 |
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