Shih-Yuan Lu1, Yi-Feng Lin1, and Yung-Jung Hsu2. (1) Department of Chemical Engineering, National Tsing-Hua University, Hsin-Chu, NV, Taiwan, (2) Dept. of Materials Science and Engineering, National Chiao-Tung University, Hsin-Chu, 30010, Taiwan
Aligned plain CdS and ternary Cd1-xZnxS nanowires were successfully fabricated via a non-catalytic and template-free MOCVD process. Aligned plain CdS and ternary Cd1-xZnxS nanowires were grown on top of a 1 ìm thick buffer layer formed in-situ on the substrate surface. The nanowires were with diameter of 20-30 nm and length of about 500-700 nm for different deposition temperatures. The energy dispersive spectrum (EDS) and X-ray diffraction (XRD) analyses confirmed the solid solution nature and hexagonal single crystalline structure of the ternary nanowires. From HRTEM images, the nanowires were found to grow along the [0001] direction of the hexagonal crystalline phase, which is the preferential growth direction of the hexagonal CdS crystals. The emission wavelength tunability of the ternary Cd1-xZnxS nanowires in photoluminescence was demonstrated and discussed.