Zhen Wu1, Christiaan Richter2, and Latika Menon1. (1) Department of Physics, Northeastern University, 111 Dana Research Center, 110 Forsyth Street,, Boston, MA 02115-5026, (2) Department of Chemical Engineering, Northeastern University, 342 Snell Engineering Center, Boston, MA 02115-5000
Chemical vapor deposition (CVD) system was used to grow GaN nanowire based on the vapor-liquid-solid (VLS) mechanism. Nanoporous alumina templates and electron-beam lithography methods was used to pattern the substrate with the required catalyst necessary for the growth of the nanostructures. Different morphologies of GaN structure will also be presented.