Traditonally, dielectric polymers used for microelectronics packaging have suffered from one of two common problems: (1) they required high temperature processing (>300 C) to achieve the final desired polymer properties (e.g. to form polyimide films from soluble and processable polyamic acid precursor films) or (2) the dielectric polymer was functionalized to a high degree to make it solution processable at the expense of significantly degraded properties. The goal of the work presented in this paper was to overcome these limitations by developing new classes of low-k dielectric polymers that are: (1) able to be formulated into photodefinable compositions, (2) able to be processed at relatively low temperatures (<280 C), and (3) can achieve dielectric constants well below 3. This paper will present an update on our work in this area and will show a new class of photodefinable low dielectric constant polymers based on flourinated polybenzoxazines. These new polymers are solution processable, can be made into photodefinable formulations, can be processed at temperatures as low as 220 C, and can achieve dielectric constants as low as 2.2. The synthesis and physical property characterization of these materials, along with a discussion of the structure-property relationships in this family of polymers, will be presented.

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