Preliminary Program subject to change
08E04 Atomic Layer Deposition
OverviewThis session focuses on the deposition of ultrathin films by atomic layer deposition. It focuses on topics ranging from new ALD chemistries and films, process characteristics, chemical mechanisms, surface science, substrate effects, deposition on particles and properties of ALD deposited films.
Primary SponsorElectronics and Photonics (08e)

Chair

Charles Musgrave
Dept. of Chemical Engineering
Stanford University
Stanford, CA 94305-5025
Phone Number: 650-725-9176
Fax Number: 650-723-9780
Email: chasm@stanford.edu

CoChair

Stacey F. Bent
Professor
Stanford University
Dept of Chemical Engineering
Stanford, CA 94305
Phone Number: 650-723-0385
Fax Number: 650-723-9780
Email: bent@stanford.edu

* Membership Number 0007036450
First Priniciples Calculation Of Atomic Layer Deposition Of HfO2
Atashi Mukhopadhyay, Chemical Engineering, Stanford University, 380 Roth Way, Stanford, CA 94305-5025, Javier Fdez. Sanz, Physical Chemistry, Universidad de Sevilla, Sevilla, Spain and Charles Musgrave, Dept. of Chemical Engineering, Stanford University, Stanford, CA 94305-5025
Atomic Layer Deposition Of Optically Active Zno And TiO2 Nanothick Films On Particles
David M. King, Xinhua Liang, Xiaohua Du, Jarod A. McCormick, Steven M. George and Alan W. Weimer, Department of Chemical and Biological Engineering, University of Colorado, 1111 Engineering Dr., Campus Box 424, Boulder, CO 80309
Material Characteristics And Electrical Properties Of Hafnium Silicate Films Synthesized By Plasma Enhanced Atomic Layer Deposition
Jiurong Liu, Ryan M. Martin, Monica Sawkar and Jane P. Chang, Chemical and Biomolecular Engineering, University of California, Los Angeles, CA 90095
Quantum Molecular Dynamics Simulations Of The Ald Of HfO2
Charles Musgrave1, Atashi Mukhopadhyay2 and Javier Sanz2, (1)Dept. of Chemical Engineering, Stanford University, Stanford, CA 94305-5025, (2)Chemical Engineering, Stanford University, Stanford, CA 94305-5025
Surface Reaction Engineering For Oxide Heteroepitaxy On Si(100)-2x1
Brian G. Willis, University of Delaware, Colburn Laboratory, 150 Academy Street, Newark, DE 19716, D.B. Skliar, Chemical Engineering, University of Delaware, Colburn Laboratory, 150 Academy Street, Newark, DE 19716 and A. Mathew, Materials Science and Engineering, University of Delaware, DuPont Hall, Newark, DE 19716

Materials Engineering and Sciences Division