Design Considerations for CdTe Nanotetrapods as Electronic Devices

Wednesday, November 19, 2008: 12:30 PM
Franklin 3 (Marriott Philadelphia Downtown)

Stephanie L. Teich-McGoldrick, University of Michigan, Ann Arbor, MI
Mathieu Bellanger, INSA (Institut National des Sciences Appliquées de Toulouse), Toulouse Cedex 4, France
Matthieu Caussanel, Laboratoire ELIAUS (Ancien LP2A), Université de Perpignan Via Domitia, Perpignan Cedex, France
Leonidas Tsetseris, Department of Physics, Aristotle University of Thessaloniki, Thessaloniki, Greece
Sokrates Pantelides, Department of Physics & Astronomy, Vanderbilt University, Nashville, TN
Sharon C. Glotzer, Chemical Engineering and Materials Science and Engineering, University of Michigan, Ann Arbor, MI
Ron. D. Schrimpf, Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN

Multiple simulation techniques are used to study the feasibility of using CdTe nanotetrapods as circuit elements. Technology Computer-Aided Design tools are used to simulate the electrical behavior for both metal-semiconductor field-effect transistors and junction field-effect transistors. Our results show that by varying the doping concentrations and material composition, CdTe nanotetrapods have the potential to be useful circuit elements. Monte Carlo simulations provide insight into how control over inter-particle and particle-substrate interactions can lead to the directed assembly of ordered arrays of electrically gated nanotetrapods.
Extended Abstract: File Not Uploaded
See more of this Session: Nanoelectronic Materials II
See more of this Group/Topical: Nanoscale Science and Engineering Forum