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Plasma-Assisted and Thermal Chemical Vapor Deposition

Tuesday, November 18, 2008: 3:15 PM
Room 202-B (Pennsylvania Convention Center)

Description:
Deposition of thin films using thermal decomposition of metal-organic and organometallic precursors. Characterization of films deposited from CVD.


Sponsor:
Electronics and Photonics


Chair:
Sang M. Han
Email: meister@unm.edu

CoChair:
John G. Ekerdt
Email: ekerdt@che.utexas.edu


3:15 PM
(370a) An Analysis of the Deposition Mechanisms Involved during Self-Limiting Growth of Metal Oxides by Pulsed PECVD
Michael T. Seman, David N. Richards and Colin A. Wolden

3:35 PM
(370b) Kinetic Monte Carlo Simulations of Surface Growth during Plasma Deposition of Silicon Thin Films
Sumeet C. Pandey, Tejinder Singh and Dimitrios Maroudas

3:55 PM
(370c) Investigation of the Growth Mechanism during Plasma-Assisted Deposition of a-C:H
Bhavin N. Jariwala, Cristian V. Ciobanu and Sumit Agarwal

4:15 PM
(370d) Remote Atmospheric Pressure Plasma Activation of Polymers
Eleazar Gonzalez II, Michael Barankin, Peter C. Guschl and Robert F. Hicks

4:35 PM
(370e) Thin-Film Deposition on Nanoparticles and Nanowires In Low-Pressure Plasma
Anaram Shahravan and Themis Matsoukas

4:55 PM
(370f) Multiferroic BiFeO3 Thin Films Deposited by MOCVD Method
Manish Singh, Yi Yang and Christos G. Takoudis

5:15 PM
(370g) Interesting Characteristics of a Vapor-Deposited Silica Thin Film
A. Anderson and W. Robert Ashurst
See more of this Group/Topical: Materials Engineering and Sciences Division
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