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Transport Phenomena In Electronic Materials Processing

Wednesday, November 19, 2008: 3:15 PM
Room 113-B (Pennsylvania Convention Center)

Description:
Transport Phenomena in Electronic Materials Processing


Sponsor:
Electronics and Photonics


Chair:
W. Robert Ashurst
Email: ashurwr@eng.auburn.edu

CoChair:
Jeffrey J. Derby
Email: derby@umn.edu


3:15 PM
(566a) Explanation for Benefits of Millisecond Annealing In Ultrashallow Junction Formation
Edmund G. Seebauer and Charlotte T. M. Kwok

3:35 PM
(566b) The Combined Role of Transport Phenomena and Interfacial Attachment Kinetics during Liquid Phase Epitaxy of Mercury Cadmium Telluride
Igal G. Rasin, Anne Ben Dov, Ilana Grimberg, Olga Klin, Eliezer Weiss and Simon Brandon

3:55 PM
(566c) First Principles Determination of Highly Mobile Dopant-Interstitial Complexes and Their Relative Contribution to Dopant Diffusion In Silicon
Kyoung E. Kweon and Gyeong S. Hwang

4:15 PM
(566d) Computational Insights into the (Complex) Aggregation Physics of Self-Interstitials
Sumeet Kapur and Talid Sinno

4:35 PM
(566e) A Comprehensive Model for Coupled Oxide Precipitation and Point Defect Aggregation In Crystalline Silicon
Rubal Dua and Talid Sinno

4:55 PM
(566f) Optically Stimulated Diffusion In Ultrashallow Junction Formation
Prashun Gorai, Charlotte Kwok and Edmund G. Seebauer

5:15 PM
(566g) Morphological Stability Analysis of Planar Crystalline Solid Surfaces Under the Simultaneous Action of Electric Fields and Mechanical Stresses
Vivek Tomar, M. Rauf Gungor and Dimitrios Maroudas
See more of this Group/Topical: Materials Engineering and Sciences Division
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