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Atomic Layer Deposition

Tuesday, November 18, 2008: 8:30 AM
401/402 (Marriott Philadelphia Downtown)

Description:
Atomic Layer Deposition This oral presenter session welcomes papers from a broad range of topics related to ALD including: equipment design, new precursor chemistries, new materials, new applications, and computational and experimental studies of chemical mechanisms and reaction pathways associated with ALD.


Sponsor:
Electronics and Photonics


Chair:
Brian G. Willis
Email: bgwillis@engr.uconn.edu

CoChair:
Charles Musgrave
Email: chasm@stanford.edu


8:30 AM
(204a) Molecular Layer Deposition of Nanoscale Organic Films
Paul W. Loscutoff and Stacey F. Bent

8:55 AM
(204b) Ald Copper-Palladium Thin Films for Molecular Electronics
Irene Hsu and Brian G. Willis

9:20 AM
(204c) Lanthanum Stabilization of Ald-Grown Hafnia
John G. Ekerdt and Tuo Wang

9:45 AM
(204d) Atomic Layer Deposited Y2O3 Thin Films Using Novel Cyclopentadienyl-Type Yttrium Precursor
Christos G. Takoudis

10:10 AM
(204e) Surface Reaction Mechanism during the Atomic Layer Deposition of Titanium Dioxide from Titanium Tetraisopropoxide and Ozone
Sumit Agarwal and Vikrant R. Rai

10:35 AM
(204f) Effect of Yb3+ Co-Doping on the Luminescent Properties of Er3+ :Y2O3 Thin Films
John Hoang and Jane P. Chang
See more of this Group/Topical: Materials Engineering and Sciences Division
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