Abstract: Improving the Electrical Properties of Doped ZnO Nanowires Via Post-Synthesis Processing for Solar Applications (2009 Annual Meeting)

Monday, November 9, 2009

Ryman Hall B1/B2 (Gaylord Opryland Hotel)

Yangluo Jim Wang, Chemical and Biomolecular Engineering, Computational and Applied Mathematics, Rice University, Houston, TX

Rodrigo Noriega, Applied Physics, Stanford University, Stanford, CA

Sujay Phadke, Mechanical Engineering, Stanford University, Stanford, CA

Saahil Mehra, Materials Science and Engineering, Stanford University, Stanford, CA

Alberto Salleo, Materials Science and Engineering, Stanford University, Stanford, CA

Zinc oxide (ZnO) is a wide band-gap material that can potentially replace indium tin oxide (ITO) as a cheaper alternative for transparent conducting electrodes. A study is undertaken to reduce the sheet resistance of low-temperature, solution-grown Ga-doped ZnO (Ga:ZnO). 1% Ga:ZnO nanowires were synthesized via a decomposition of metal salts in trioctylamine at 300°C. Post-deposition annealing in nitrogen reduced the sheet resistance by several orders of magnitude. Other methods such as the fabrication of Ga:ZnO-Ag composites and Ga:ZnO/PEDOT:PSS bilayers were investigated. The composites had a sheet resistance on the same order as unannealed Ga:ZnO, whereas Ga:ZnO/PEDOT:PSS bilayers had a comparable resistivity to the best annealed Ga:ZnO film.

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See more of this Session: Student Poster Session: Materials Engineering and Sciences
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