Intense SERS Effect From a Single Metallized Silicon Nanowire

Thursday, November 11, 2010: 4:00 PM
Seminar Theater (Hilton)
Ajay Agarwal1, Effendi Widjaja2, Mohamed Khalid Nizamudin2, Shaik Mohamed Salim2 and Marc Garland2, (1)Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research),, Singapore, Singapore, (2)Process Science and Modelling, Institute of Chemical and Engineering Sciences, Singapore, Singapore

Metallized silicon (Si) nanowires are created by just by dipping the nanowires into an aqueous deposition solution for several minutes. Upon dipping into solution, metal ions were reduced and deposited on the top of the Si nanowire. Surface silicon oxide was simultaneously dissolved and removed by hydrogen fluoride (HF), so that the deposition reaction was sustainable and controllable. The deposited silver (Ag) nanoparticles (NPs) uniformly covered the silicon nanowires. Also Cu, Pd, Co, Au, and Pt were deposited to metallize the silicon nanowires in a similar manner. Applications of the new nano-composite materials were explored. When the Ag coated silicon nanowire was tested as a Surface-Enhanced Raman Scattering (SERS) substrate, an extremely strong signal was observed. The significantly enhanced SERS effect appears to be associated with the close packing of the neighboring NPs that self-assemble along the highly curved nanowire [1].

[1] C Fang, A Agarwal, E Widjaja, M Garland, SM Wong, L Linn, M K Nizamudin , S M Salim, and N Balasubramanian Chem. Mater. 2009, 21, 3542–3548


Extended Abstract: File Not Uploaded