312002 Discovering Materials With Ultra-Low Work Functions for Thermionics Energy Conversion

Wednesday, November 6, 2013: 5:51 PM
Continental 1 (Hilton)
Sharon H. Chou1, Johannes Voss2,3, Aleksandra Vojvodic2,3, Roger T. Howe1 and Frank Abild-Pedersen3, (1)Department of Electrical Engineering, Stanford University, Stanford, CA, (2)Department of Chemical Engineering, Stanford University, Stanford, CA, (3)SUNCAT Center for Interface Science and Catalysis, SLAC National Accelerator Laboratory, Menlo Park, CA

The work function is one of the most fundamental properties of a metallic surface, important in determining the material’s applicability as a contact electrode [1, 2] or electron emitter [3]. Surfaces with ultra-low work functions could therefore improve technologies requiring precise control of contact barriers such as organic and printed electronics [2] or a variety of devices based on electron emission, ranging from fluorescent light bulbs [4, 5] to THz sources [6], thermionic energy converters (TECs) [7], and the photon-enhanced thermionic emission converters (PETEC) [8]. For TEC and PETEC, in particular, discovery of thermally stable materials with work functions of less than 1 eV would allow thermionic conversion of high-temperature (> 500 °C) heat or solar radiation directly to electricity with efficiencies exceeding 50%.

We present a model based on adsorbate atomic orbital interactions which offers new insights into the interfacial phenomena that control the work function [9]. In addition to the model, we will discuss ab-initio studies of surfaces with alloyed alkali metal and alkali-earth metal oxides. These adsorbed compound structures can enhance the emissivity of refractory metal substrates commonly used in current electron-emissive devices. By visualizing the electrostatic charge distributions, surface dipole formations, and the corresponding changes in the work function, we can devise design rules for low-work function materials to be incorporated into high-efficiency thermionic energy conversion devices.

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[6] Snapp J P, Lee J-H, Provine J, Bargatin I, Maboudian R, Lee T H and Howe R T 2012 Sidewall silicon carbide emitters for terahertz vacuum electronics Solid-State Sensor and Actuator Workshop (San Diego, CA, June)

[7] Lee J-H, Bargatin I, Provine J, Clay W, Schwede J, Liu F, Maboudian R, Melosh N, Shen Z-X and Howe R T 2009 Tech. Dig. Power MEMS

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[9] Chou S H, Voss J, Bargatin I, Vojvodic A, Howe R T and Abild-Pedersen F 2012 J. Phys.: Condens. Matter 24, 445007


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