Nanoparticle Photoresists: Synthesis and Characterization of Next-Generation Patterning Materials

Hybrid metal oxide nanoparticle photoresists are prominent candidates for next-generation photolithography due to their exceptional sensitivity to extreme ultraviolet (EUV) radiation. To improve the resist’s resolution, roughness, and sensitivity (RLS) performance, we explore new compositions for this nanoparticle system. In this study, a series of new nanoparticle resist compositions are synthesized and characterized by solubility and radiation dose tests, as well as deep ultraviolet (DUV) and electron-beam patterning.