(Plasma-Enhanced) Atomic Layer Deposition Infilling of Nanocrystal Networks

In this study, we present infilling of nanocrystal networks using of atomic layer deposition (ALD) and plasma-enhanced atomic layer deposition (PEALD) as effective methods to produce thin-film materials with desirable electrical and optical properties. Using a scanning transmission electron microscope (STEM), we acquire spatially-resolved energy dispersive x-ray (EDX) and electron energy loss spectra (EELS) to assess the uniformity of infilling nanocrystal networks using both PEALD and ALD. By infilling ZnO nanocrystal networks with TiN using PEALD, we fabricate transparent conducting thin-films with possible applications in photodetection devices, photocatalysis, and photovoltaic energy conversion. Further, we provide justification for previous investigations of the insulator-to-metal transition by demonstrating uniformity of various element concentrations throughout both insulating and metallic ZnO nanocrystal networks infilled with Al₂O₃.