Abstract: Mechanisms of Halogenated Silane Decomposition on an N-Rich Surface during Atomic Layer Deposition of Silicon Nitride (2018 AIChE Annual Meeting)

Gregory Hartmann¹, Peter Ventzek², Toshihiko Iwao³, Kiyotaka Ishibashi³ and Gyeong S. Hwang¹, (1)McKetta Department of Chemical Engineering, The University of Texas at Austin, Austin, TX, (2)Tokyo Electron America, Inc., Austin, TX, (3)Tokyo Electron Technology Solutions Ltd., Tokyo, Japan

See more of this Session: Industrial Applications of Computational Chemistry and Molecular Simulation
See more of this Group/Topical: Computational Molecular Science and Engineering Forum

537090 Mechanisms of Halogenated Silane Decomposition on an N-Rich Surface during Atomic Layer Deposition of Silicon Nitride