Abstract: Fabrication and Characterization of Ionomer-Gated MoTe<sub>2</Sub> Field Effect Transistors (2018 AIChE Annual Meeting)

M. Eli Bostian¹, Ke Xu¹, Hangjun Ding², James R. McKone³, Eric J. Beckman³ and Susan Fullerton-Shirey⁴, (1)Department of Chemical and Petroleum Engineering, University of Pittsburgh, Pittsburgh, PA, (2)University of Pittsburgh, Pittsburgh, PA, (3)Chemical and Petroleum Engineering, University of Pittsburgh, Pittsburgh, PA, (4)Department of Electrical Engineering, University of Pittsburgh, Pittsburgh, PA

See more of this Session: Electronic and Photonic Materials Devices and Theory
See more of this Group/Topical: Materials Engineering and Sciences Division

538222 Fabrication and Characterization of Ionomer-Gated MoTe2 Field Effect Transistors

538222 Fabrication and Characterization of Ionomer-Gated MoTe₂ Field Effect Transistors