The fouling of GO membranes (GOM) was quantified using a resistance-in-series model that allows for each of the intrinsic membrane resistance and the resistance caused by organic adsorption, concentration polarization or the formation of a gel layer to be determined.8 GOM9 fouling by Tannic Acid, Bovine Serum Albumin and Methyl blue occurs primarily by absorbance, where hydraulic cleaning has no effect on the removal of the foulant, resulting in an increase in the resistance caused by concentration polarization. Ethanol results in an overall cleaning efficiency (OCE) of 22% for a GOM fouled with methyl blue; however, it exacerbates the compression of the gel layer for a membrane fouled with tannic acid. Cleaning with 100 ppm of sodium hypochlorite results in 98.96% and over 100% OCE by removing any resistances caused by absorbance of TA or MB to the surface of the GO, the resistance of the cleaned membrane is less than that of non-fouled membrane and is indicative of membrane instability after prolonged exposure to sodium hypochlorite. However, the BSA fouled GOM has an OCE of 62% due to the formation of a persistent gel layer. FTIR and XRD measurements of GO films exposed to 100,000 ppm.h of NaOCl show that high levels of chlorine exposure result in an interlayer spacing increase from 7.86 to 9.26Å with a corresponding increase in hydroxyl, carboxyl and epoxy functionalities. In an effort to reduce the chlorination of GO, GO was doped with graphene (G) in a ratio of 10:1 GO:G, an FTIR analysis of which revealed relatively less oxidation with fewer new functionalities resulting in an interlayer spacing increased from 8.12 to 9.24 Å. Similarly, doping with Montmorillonite (MMT) shows a similar improvement in chlorine resistance. Thus, this work aims to discuss the mechanisms by which the membrane is fouled and the effect of sodium hypochlorite on the organic foulants and the graphene oxide membrane. Additionally, doping with graphene and MMT may provide a simple method to improve chlorine resistance of GO membranes.
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