| Shape Memory and Pseudoelasticity in FCC Metal Nanowires | ||
| Dr. Ken Gall, Professor1, Jon Zimmerman2 and Harold Park3, 1School of Materials Science and Engineering, Georgia Institute of Technology, Department of Mechanical Engineering, 771 Ferst Drive, N.W., Atlanta, GA 30332-0245, 2Sandia National Laboratory, Sandia National Laboratory, Livermore, CA 94550, 3Vanerbilt University, Vanderbilt University, Nashville, TN 37235
Structural reorientations in metallic fcc nanowires are controlled by a combination of size, thermal energy and the type of defects formed during inelastic deformation. By utilizing atomistic simulations, we show that fcc nanowires can exhibit shape memory and pseudoelastic behavior that was previously believed to be limited to exotic alloys such as NiTi. We also show that the formation of defect free twins, a process related to the material stacking fault energy, is the mechanism that controls the ability of fcc nanowires of di•erent materials to show reversibility in loading and thus shape memory and pseudoelasticity. The ability of nanowires comprised of traditional metallic materials to show shape memory and pseudoelasticity has significant scientific and technological implications. | ||