| Ion Beam Projection Techniques for Locally Inducing Intermixing in Ni-Ti Thin Films | ||
| Prof. Yves Bellouard1, Prof. Andreas Dietzel2, Dr. Wilhelm Bruenger3, Xi Wang4 and Prof. Joost J. Vlassak5, 1Departement of Mechanical Engineering / Micro- & Nano- Scale engineering, Technische Universiteit Eindhoven, Den Dolech 2, PO Box 513, Eindhoven, 5600 MB, Netherlands, 2Departement of Mechanical Engineering / Micro- & Nano- Scale engineering, Technische Universiteit Eindhoven, Den Dolech 2, Eindhoven, 5600 MB, Netherlands, 3ISIT, Fraunhofer Institute, Fraunhoferstraße 1, Itzehoe, 25524, Germany, 4Division of Engineering and Applied Science, Harvard University, 29 Oxford Street, Cambridge, Boston, MA 02138, 5Division of Engineering and Applied Sciences, Harvard University, 29 Oxford Street, Cambridge, MA 02138
Ion beam projection techniques consist of using an ion beam with a pattern defined by a stencil mask. Features sizes can be below 100 nm. A variety of ions such as Ar, He, or Xe and a wide range of energies are available depending on the desired penetration depth and structural modification. In this paper, we explore the use of ion beam projection to locally modify annealed Ni-Ti thin films by inducing intermixing between an annealed sputter-deposited sub-micron Ni-Ti film and a Ti or Ni layer deposited on top of the Ni-Ti. The objective is to alter the composition and transition temperatures of the Ni-Ti according to a pattern defined by the stencil mask. We report preliminary experimental results as well as a simulation of the intermixing process. | ||