The origin of the integrated circuit began with the fabrication of a circuit consisting only 4 transistors on a single silicon chip. Since that time, complex circuits are fabricated where feature sizes are halved almost every year [1]. The two main advantages of squeezing many transistors on a single chip are decrease in cost and an increase in device performance. However, several factors such as size and geometry limitations suggest that this exponential increase may not be viable for much longer. In order to continue the progress in optoelectronics and sustain the miniaturization trend, novel fabrication strategies will need to be developed [2]. It is hypothesized that optoelectronic devices of future may utilize quantum effects [1]. Nevertheless, current techniques for preparation of one-dimensional systems such as quantum wires face technical difficulties and elevated cost due to the severe dimensions of atomic scale. Moreover, preparation of quantum wire arrays necessary for device integration currently is not feasible. Therefore, novel strategies for nanomanufacturing of aligned quantum wire arrays should be investigated. Yilmaz et al. [3] proposed that ETS-4 and ETS-10 naturally contains “intrinsic” quantum wire arrays in their framework. Titanosilicate ETS-4 and ETS-10 are porous crystalline materials. They contain linear monatomic –OTiOTiO- chains isolated from one another by siliceous matrix in their framework. These monatomic chains can show quantum confinement effects where electrons are confined in two dimensions; therefore, ETS-4 and ETS-10 crystals can be considered as aligned quantum wire arrays. Previously synthesized large ETS-4 and ETS-10 crystals (200 µm and 80 µm, respectively) were suitable to test their potential behavior to determine if they were acting like quantum wire arrays [3]. Device integration of individual ETS-4 crystal was performed utilizing the nanofabrication methods including 2-step photolithography, metal deposition of chromium & gold and lift-off. Prototype device was tested by constructing current-voltage curves at room temperature. Conduction appeared to occur through the monatomic titania chains in the framework of ETS-4 crystal and the conductivity of the titania chains decreases at high bias voltage (~30V). Moreover, it was found from the I-V graph of consecutive measurements and double sweep mode, under high bias voltage, current-voltage behavior of the ETS-4 crystal is history dependent and conducting medium becomes to collapse. Result will be presented on the testing ETS-4 devices at low temperature at which quantization properties of electrons are expected to be easier to ascertain. Additionally, ETS-10 will be utilized which is thermally more stable than ETS-4. These observations provide a basis for utilizing ETS compounds in quantum circuits.

[1] Turton, Richard, “The quantum dot: a journey into the future of microelectronics”, New York, Oxford University Press, 1995. [2] Watkins, J. J. and D. J. Bishop, MRS Buletin, 30(12), 937-938, 2005. [3] Yilmaz B, Warzywoda J, and Sacco A Jr, Journal of Crystal Growth, 271, 325-331, 2004.

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