Integrated circuits and other small electronic packages require conformal coatings that are capable of protecting them from the environment, including mechanical abrasion and electrical breakdown in high fields. Therefore, the deposition of silicon dioxide coatings on metal was investigated using atmospheric pressure plasma-enhanced chemical vapor deposition. The plasma, generated with radio frequency power at 27.12 MHz, was fed helium, oxygen and two types of silicon precursors, hexamethyldisilizane (HMDSN) and tetraethylorthosilicate (TEOS). After deposition, the films were analyzed for composition, adhesion and dielectric strength. X-ray photoelectron spectroscopy revealed that the glass films contained approximately 25% silicon, 50% oxygen and 25% carbon with negligible nitrogen. Scratch tests indicated that the films were strongly adherent to the substrates. The glass films achieved DC dielectric strengths in between 50 and 250 V for a thickness range of 0.5 to 1.3 µm. The maximum breakdown voltage measured was 400 V. Scanning electron microscopy revealed that breakdown occurred at cracks and other defects in the films. These defects appeared to form around areas of surface roughness and contamination. The process conditions and their effects on the properties of silicon dioxide will be presented at the meeting.

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