| We invite papers that present recent advances in Chemical Vapor Deposition (CVD). Topics traditionally covered in this session include: CVD reactor diagnostics and modeling, scale-up issues, equipment development, novel deposition precursors, precursor delivery systems, sensors and process control, gas-phase and surface chemical reaction mechanisms, kinetics, chemically reacting flow simulations, nucleation and growth models. Applications to microelectronics, optoelectronics, thin-film coatings, synthesis of nanowires & nanotubes, and new-material development are welcome. Papers illustrating non-traditional applications of Chemical Engineering to CVD research, materials processing and advances in chemical engineering science through CVD research are especially encouraged. |
Atmospheric Plasma Deposition Of Silicon Dioxide Coatings For Mechanical And Electrical Protection
Angela M. Ladwig1, Steve Babayan2, Mark Smith1, Mike Hester1, Wayne Highland1, Ronald Koch1 and Robert F. Hicks3, (1)National Nuclear Security Administration's Kansas City Plant, 2000 E. 95th Street, PO Box 419159, Kansas City, MO 64141, (2)Surfx Technologies, LLC, 3617 Hayden Ave, Culver City, CA 90232, (3)Chemical & Biomolecular Engineering, University of California, Los Angeles, Box 951592, Los Angeles, CA 90095-1592 |
Fluidized Bubbling Bed Reactor Model For Silane Pyrolysis In Solar Grade Silicon Production
Yue Huang, Palghat A. Ramachandran and Milorad P. Dudukovic, Department of Energy, Environmental & Chemical Engineering, Washington University in St. Louis, Campus Box 1198, Saint Louis, MO 63130 |
Effects Of Microstructure And Elemental Composition On Material Properties Of Lpcvd Sic Films For Micro- And Nanosystems
Christopher S. Roper, Chemical Engineering, University of California, Berkeley, 201 Gilman Hall, Berkeley, CA 94709, Roger T. Howe, Stanford University, Stanford, CA 94305 and Roya Maboudian, Department of Chemical Engineering, University of California, Berkeley, 201 Gilman Hall, Berkeley, CA 94720 |
Growth And Characterization Of Ill-V Compound Semiconductors On Silicon
S. F. Cheng, R. L. Woo, Li Gao and R. F. Hicks, Department of Chemical and Biomolecular Engineering, University of California, Los Angeles, Los Angeles, CA 90095 |
Chemical Vapor Deposition Growth And The Evolution Of The Microstructure Of Indium Arsenide On Gallium Arsenide
Thomas F. Kuech1, Anish Khandekar2, Xueyan Song3, Susan Babcock3, Manish Rathi2 and Ganasen Suryanarayanan3, (1)Department of Chemical Engineering, University of Wisconsin, 1415 Engineering Drive, Madison, WI 53706, (2)Dept. of Chemical and Biological Engineering, University of Wisconsin, 1415 Engineering Drive, Madison, WI 53706, (3)Materials Science and Engineering Department, University of Wisconsin, 1415 Engineering Drive, Madison, WI 53706 |
The Chemical Vapor Deposition Growth of Gallium Arsenide-Based Quantum Well ‘W' Structures for Mid-IR
Thomas F. Kuech1, Manish Rathi2, Anish A. Khandekar2, D.P. Xu3, J. Y. T. Huang3, J.H. Park3, Luke J. Mawst3, Xueyan Song4 and S.E. Babcock4, (1)Department of Chemical Engineering, University of Wisconsin, 1415 Engineering Drive, Madison, WI 53706, (2)Chemical nd Biological Engineering, University of Wisconsin, 1415 Engineering Drive, Madison, WI 53706, (3)Electrical and Computer Engineering, University of Wisconsin, 1415 Engineering Drive, Madison, WI 53706, (4)Materials Science and Engineering, University of Wisconsin, 1415 Engineering Drive, Madison, WI 53706 |
|